Quick Jump:
Technical Specifications
NXP PDTA113EE115 technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Emitter Base Voltage (VEBO) | -10V |
| hFE Min | 30 |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTA113EE115 Datasheet
Download the complete datasheet for NXP PDTA113EE115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
