The PNP Transistor has a collector-emitter breakdown voltage of 50V and a maximum collector current of 20mA. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 150mW. The transistor is packaged in a SC-75 package with 3 pins and is suitable for surface mount applications. It is RoHS compliant and not radiation hardened.
PackageSC
MountingSurface Mount
PolarityPNP
Power150mW
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Technical Specifications
NXP PDTA115EE,115 technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | -50V |
| Collector-emitter Voltage-Max | 150mV |
| Emitter Base Voltage (VEBO) | -10V |
| hFE Min | 80 |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 20mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTA115EE,115 Datasheet
Download the complete datasheet for NXP PDTA115EE,115 to view detailed technical specifications.
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