NXP
PDTA123ET
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
PackageTO-236AB
MountingSurface Mount
PolarityPNP
Power250mW
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Technical Specifications
NXP PDTA123ET technical specifications.
General
Package/Case
TO-236AB
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
-150mV
Emitter Base Voltage (VEBO)
-10V
Height
1mm
hFE Min
30
Length
3mm
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Packaging
Cut Tape
Polarity
PNP
Power Dissipation
250mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP PDTA123ET Datasheet
Download the complete datasheet for NXP PDTA123ET to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.