The PDTA123ET is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a collector-emitter saturation voltage of 150mV. It can handle a maximum collector current of 100mA and a maximum power dissipation of 250mW. The transistor is packaged in a TO-236AB plastic package and is designed for surface mount applications. It has a minimum operating temperature of -65°C and a maximum operating temperature of 150°C. The PDTA123ET is RoHS compliant and not Reach SVHC compliant.
PackageTO-236AB
MountingSurface Mount
PolarityPNP
Power250mW
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Technical Specifications
NXP PDTA123ET technical specifications.
General
| Package/Case | TO-236AB |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | -150mV |
| Emitter Base Voltage (VEBO) | -10V |
| Height | 1mm |
| hFE Min | 30 |
| Length | 3mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Polarity | PNP |
| Power Dissipation | 250mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTA123ET Datasheet
Download the complete datasheet for NXP PDTA123ET to view detailed technical specifications.
No datasheet is available for this part.