The PDTA123JM,315 is a PNP transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a leadless ultra-small plastic SC-101 package with three pins. The transistor is designed for surface mount applications and is rated for a maximum power dissipation of 250mW. It can operate over a temperature range of -65°C to 150°C and is compliant with RoHS regulations.
PackageSOT-883-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP PDTA123JM,315 technical specifications.
General
| Package/Case | SOT-883-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 100mV |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTA123JM,315 Datasheet
Download the complete datasheet for NXP PDTA123JM,315 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.