The PDTA123TT,215 is a PNP transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a TO-236AB plastic package with three pins and is designed for surface mount applications. The transistor has a maximum power dissipation of 250mW and operates over a temperature range of -65°C to 150°C. It is lead-free and RoHS compliant.
PackageTO-236AB
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP PDTA123TT,215 technical specifications.
General
| Package/Case | TO-236AB |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTA123TT,215 Datasheet
Download the complete datasheet for NXP PDTA123TT,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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