The PDTA143TT is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 250mW and is packaged in a TO-236AB plastic package. The transistor is surface mountable and has a minimum operating temperature of -65°C and a maximum operating temperature of 150°C. It is RoHS compliant and does not contain any SVHC compliant materials.
PackageTO-236AB
MountingSurface Mount
PolarityPNP
Power250mW
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Technical Specifications
NXP PDTA143TT technical specifications.
General
| Package/Case | TO-236AB |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | -150mV |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 1mm |
| hFE Min | 200 |
| Length | 3mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Polarity | PNP |
| Power Dissipation | 250mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTA143TT Datasheet
Download the complete datasheet for NXP PDTA143TT to view detailed technical specifications.
No datasheet is available for this part.