
The PNP Transistor is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 150mW and is suitable for surface mount applications. The transistor operates within a temperature range of -65°C to 150°C and is compliant with RoHS regulations. It is available in a single unit package, packaged on a tape and reel.
NXP PDTA144WE,115 technical specifications.
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for NXP PDTA144WE,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.