PackageTO-236AB
MountingSurface Mount
PolarityPNP
Power250mW
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Technical Specifications
NXP PDTB113ZT technical specifications.
General
Package/Case
TO-236AB
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
300uV
Collector Emitter Voltage (VCEO)
300mV
Emitter Base Voltage (VEBO)
-5V
Height
1mm
hFE Min
70
Length
3mm
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Packaging
Cut Tape
Polarity
PNP
Power Dissipation
250mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP PDTB113ZT Datasheet
Download the complete datasheet for NXP PDTB113ZT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.