NPN bipolar junction transistor featuring integrated 10 kOhm base resistor and open second resistor. Surface mount SC package with 3 leads, measuring 1.8mm x 0.9mm x 0.85mm. Offers a 50V collector-emitter breakdown voltage and 150mV collector-emitter saturation voltage. Maximum collector current is 100mA with a minimum hFE of 200. Operates from -65°C to 150°C with 150mW power dissipation.
PackageSC
MountingSurface Mount
PolarityNPN
Power150mW
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Technical Specifications
NXP PDTC114TE,115 technical specifications.
General
Package/Case
SC
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
150mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
150mV
Emitter Base Voltage (VEBO)
5V
Height
0.85mm
hFE Min
200
Lead Free
Lead Free
Length
1.8mm
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
150mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Width
0.9mm
Compliance
RoHS
Compliant
Datasheet
NXP PDTC114TE,115 Datasheet
Download the complete datasheet for NXP PDTC114TE,115 to view detailed technical specifications.
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