The PDTC114YEF,115 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 250mW and is packaged in a small outline R-PDSO-F3 package. The transistor is not RoHS compliant. Operating temperature range is not specified.
PackageSC
MountingSurface Mount
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Technical Specifications
NXP PDTC114YEF,115 technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 100mV |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NXP PDTC114YEF,115 Datasheet
Download the complete datasheet for NXP PDTC114YEF,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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