The PDTC115EU is a surface mount NPN bipolar junction transistor with a collector emitter breakdown voltage of 50V and a maximum collector current of 20mA. It has a maximum power dissipation of 200mW and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a SOT-323 case and is RoHS compliant.
PackageSOT-323
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PDTC115EU technical specifications.
General
| Package/Case | SOT-323 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 1mm |
| hFE Min | 80 |
| Length | 2.2mm |
| Max Collector Current | 20mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTC115EU Datasheet
Download the complete datasheet for NXP PDTC115EU to view detailed technical specifications.
No datasheet is available for this part.