The PDTC123JMB,315 is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is designed for surface mount applications with a maximum power dissipation of 250mW. The transistor is packaged in tape and reel quantities of 10,000 units and is compliant with RoHS regulations. It has a transition frequency of 230MHz and is suitable for high-frequency applications.
MountingSurface Mount
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Technical Specifications
NXP PDTC123JMB,315 technical specifications.
General
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 100mV |
| Max Collector Current | 100mA |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| Transition Frequency | 230MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTC123JMB,315 Datasheet
Download the complete datasheet for NXP PDTC123JMB,315 to view detailed technical specifications.
No datasheet is available for this part.