This NPN bipolar junction transistor has a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The maximum power dissipation is 200mW. It is packaged in a small outline R-PDSO-G3 package and is available in quantities of 3000. The transistor is lead-free and RoHS compliant. It is suitable for surface mount applications.
PackageSC
MountingSurface Mount
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Technical Specifications
NXP PDTC123TU,115 technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTC123TU,115 Datasheet
Download the complete datasheet for NXP PDTC123TU,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.