The PDTC124TE115 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 150mW and operates over a temperature range of -65°C to 150°C. This lead-free transistor is packaged in a single SC package and is available on tape and reel.
PackageSC
MountingSurface Mount
PolarityNPN
Power150mW
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Technical Specifications
NXP PDTC124TE115 technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTC124TE115 Datasheet
Download the complete datasheet for NXP PDTC124TE115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.