NXP
PDTD113ZT
TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
PackageTO-236AB
MountingSurface Mount
Power250mW
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Technical Specifications
NXP PDTD113ZT technical specifications.
General
Package/Case
TO-236AB
Collector Base Voltage (VCBO)
50V
Collector Emitter Saturation Voltage
300mV
Emitter Base Voltage (VEBO)
5V
Height
1mm
hFE Min
70
Length
3mm
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Mount
Surface Mount
Number of Elements
1
Power Dissipation
250mW
RoHS Compliant
Yes
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP PDTD113ZT Datasheet
Download the complete datasheet for NXP PDTD113ZT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.