NXP
PDTD123TT
TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
PackageTO-236AB
MountingSurface Mount
PolarityNPN
Power250mW
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Technical Specifications
NXP PDTD123TT technical specifications.
General
Package/Case
TO-236AB
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
300mV
Emitter Base Voltage (VEBO)
5V
Height
1mm
hFE Min
100
Length
3mm
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Polarity
NPN
Power Dissipation
250mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP PDTD123TT Datasheet
Download the complete datasheet for NXP PDTD123TT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.