The PEMD18,115 is a bipolar junction transistor available in a surface mount SOT-666 package. It has a maximum collector current of 100mA and a maximum power dissipation of 300mW. The transistor is rated for operation between -65°C and 150°C. It is RoHS compliant and available in quantities of 4000 per reel.
PackageSOT-666
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
NXP PEMD18,115 technical specifications.
General
| Package/Case | SOT-666 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 100mV |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP PEMD18,115 Datasheet
Download the complete datasheet for NXP PEMD18,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.