Transient Voltage Suppressor Diode for ESD protection, featuring a 3.3V reverse standoff voltage and a maximum operating temperature of 150°C. This unidirectional, single-element silicon diode offers a minimum breakdown voltage of 5.2V and a nominal breakdown voltage of 5.6V, with a maximum clamping voltage of 20V. It provides a non-repetitive peak reverse power dissipation of 330W and is housed in a 2-terminal SOD523 package.
PolarityUNIDIRECTIONAL
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Technical Specifications
NXP PESD3V3S1UB,115 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 3.3 |
| Breakdown Voltage-Min | 5.2 |
| Non-rep Peak Rev Power Dis-Max | 330 |
| Clamping Voltage-Max | 20 |
| Breakdown Voltage-Nom | 5.6 |
| Breakdown Voltage-Max | 6 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP PESD3V3S1UB,115 Datasheet
Download the complete datasheet for NXP PESD3V3S1UB,115 to view detailed technical specifications.
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