Transient Voltage Suppressor Diode for ESD protection, featuring a 3.3V reverse standoff voltage and a maximum operating temperature of 150°C. This unidirectional, single-element silicon diode offers a minimum breakdown voltage of 5.2V and a nominal breakdown voltage of 5.6V, with a maximum clamping voltage of 20V. It provides a non-repetitive peak reverse power dissipation of 330W and is housed in a 2-terminal SOD523 package.
PolarityUNIDIRECTIONAL
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Technical Specifications
NXP PESD3V3S1UB,115 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Terminal Position
DUAL
Pin Count
2
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
3.3
Breakdown Voltage-Min
5.2
Non-rep Peak Rev Power Dis-Max
330
Clamping Voltage-Max
20
Breakdown Voltage-Nom
5.6
Breakdown Voltage-Max
6
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
Compliant
Military Spec
False
Datasheet
NXP PESD3V3S1UB,115 Datasheet
Download the complete datasheet for NXP PESD3V3S1UB,115 to view detailed technical specifications.
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