The PH1825AL,115 is a N-CHANNEL TrenchMOS MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 104W and a continuous drain current of 100A. The device is packaged in a SOT-669 package and is mounted using a surface mount method. It is RoHS compliant and has a drain to source breakdown voltage of 25V.
PackageSOT-669
MountingSurface Mount
PolarityN-CHANNEL
Power104W
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Technical Specifications
NXP PH1825AL,115 technical specifications.
General
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 1.8mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.3nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 104W |
| Radiation Hardening | No |
| Rds On Max | 1.8mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 47ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PH1825AL,115 Datasheet
Download the complete datasheet for NXP PH1825AL,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.