N-channel MOSFET featuring 25V drain-source breakdown voltage and 99A continuous drain current. Offers a low 4mΩ drain-source on-resistance and 46.4W maximum power dissipation. Designed for surface mounting with a compact 5mm x 4.1mm x 1.1mm LFPAK package. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including 28.3ns turn-on delay and 24ns fall time. Lead-free and RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power46.4W
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Technical Specifications
NXP PH4025L,115 technical specifications.
General
| Continuous Drain Current (ID) | 99A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 2.601nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 46.4W |
| Mount | Surface Mount |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 46.4W |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 28.3ns |
| Width | 4.1mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PH4025L,115 Datasheet
Download the complete datasheet for NXP PH4025L,115 to view detailed technical specifications.
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