N-channel MOSFET transistor featuring a 30V drain-to-source breakdown voltage and 15A continuous drain current. Offers a low 5.7mΩ drain-to-source resistance at a 10V gate-to-source voltage. Designed for surface mounting in a SOT-669 package, this component boasts a maximum power dissipation of 62.5W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 13ns.
PackageSOT-669
MountingSurface Mount
PolarityN-CHANNEL
Power62.5W
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Technical Specifications
NXP PH5330E,115 technical specifications.
General
Package/Case
SOT-669
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
5.7mR
Drain to Source Voltage (Vdss)
30V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.01nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
62.5W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
62.5W
Radiation Hardening
No
Rds On Max
5.7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchMOS™
Threshold Voltage
1.7V
Turn-Off Delay Time
56ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
NXP PH5330E,115 Datasheet
Download the complete datasheet for NXP PH5330E,115 to view detailed technical specifications.
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