N-channel MOSFET featuring 30V drain-source breakdown voltage and 76.7A continuous drain current. Surface mountable in a SOT-669 (LFPAK) package, this component offers a low 5.9mΩ drain-to-source resistance. Operating across a wide temperature range of -55°C to 150°C, it supports a maximum power dissipation of 62.5W. Key switching characteristics include a 25ns turn-on delay and 14ns fall time, with a 2.26nF input capacitance.
PackageSOT-669
MountingSurface Mount
PolarityN-CHANNEL
Power62.5W
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Technical Specifications
NXP PH8030L,115 technical specifications.
General
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 76.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 2.26nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 62.5W |
| Radiation Hardening | No |
| Rds On Max | 5.9mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 25ns |
| Width | 4.1mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PH8030L,115 Datasheet
Download the complete datasheet for NXP PH8030L,115 to view detailed technical specifications.
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