N-channel MOSFET featuring 30V drain-source breakdown voltage and 76.7A continuous drain current. Surface mountable in a SOT-669 (LFPAK) package, this component offers a low 5.9mΩ drain-to-source resistance. Operating across a wide temperature range of -55°C to 150°C, it supports a maximum power dissipation of 62.5W. Key switching characteristics include a 25ns turn-on delay and 14ns fall time, with a 2.26nF input capacitance.
PackageSOT-669
MountingSurface Mount
PolarityN-CHANNEL
Power62.5W
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Technical Specifications
NXP PH8030L,115 technical specifications.
General
Package/Case
SOT-669
Continuous Drain Current (ID)
76.7A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
5.9mR
Drain to Source Voltage (Vdss)
30V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
2.26nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
62.5W
Mount
Surface Mount
Package Quantity
1500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
62.5W
Radiation Hardening
No
Rds On Max
5.9mR
RoHS Compliant
Yes
Series
TrenchMOS™
Turn-Off Delay Time
27ns
Turn-On Delay Time
25ns
Width
4.1mm
Compliance
RoHS
Compliant
Datasheet
NXP PH8030L,115 Datasheet
Download the complete datasheet for NXP PH8030L,115 to view detailed technical specifications.
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