N-channel MOSFET with 30V drain-source breakdown voltage and 63A continuous drain current. Features low 9.9mΩ drain-source on-resistance and 62.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Designed for surface mounting in a compact LFPAK package, measuring 5mm x 4.1mm x 1.1mm. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 25ns. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
Power62.5W
Quick Jump:
Technical Specifications
NXP PH9930L,115 technical specifications.
General
Continuous Drain Current (ID)
63A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
9.9mR
Drain to Source Voltage (Vdss)
30V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
1.565nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
62.5W
Mount
Surface Mount
Package Quantity
1500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
62.5W
Rds On Max
9.9mR
RoHS Compliant
Yes
Series
TrenchMOS™
Turn-Off Delay Time
15ns
Turn-On Delay Time
20ns
Width
4.1mm
Compliance
RoHS
Compliant
Datasheet
NXP PH9930L,115 Datasheet
Download the complete datasheet for NXP PH9930L,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.