The PHD34NQ10T,118 is a surface mount N-CHANNEL TrenchMOS MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 136W and a continuous drain current of 35A. The device features a drain to source breakdown voltage of 100V and a drain to source resistance of 40mR. It is RoHS compliant and available in a tape and reel packaging with 2500 units per package.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power136W
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Technical Specifications
NXP PHD34NQ10T,118 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.704nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 136W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHD34NQ10T,118 Datasheet
Download the complete datasheet for NXP PHD34NQ10T,118 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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