Quick Jump:
Technical Specifications
NXP PHD63NQ03LT,118 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 68.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 920pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 111W |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 111W |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 10.5ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHD63NQ03LT,118 Datasheet
Download the complete datasheet for NXP PHD63NQ03LT,118 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
