N-channel MOSFET, surface mount, DPAK package. Features 25V drain-source breakdown voltage, 75A continuous drain current, and 9mΩ drain-source resistance at a nominal 1.5V gate-source voltage. Operates with a maximum gate-source voltage of 20V and offers a maximum power dissipation of 107W. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 15ns. RoHS compliant, with an operating temperature range of -55°C to 175°C.
PackageSOT-428
MountingSurface Mount
PolarityN-CHANNEL
Power107W
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Technical Specifications
NXP PHD78NQ03LT,118 technical specifications.
General
| Package/Case | SOT-428 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 25V |
| Dual Supply Voltage | 25V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 970pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 107W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHD78NQ03LT,118 Datasheet
Download the complete datasheet for NXP PHD78NQ03LT,118 to view detailed technical specifications.
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