N-channel MOSFET with 30V drain-source breakdown voltage and 23.7A continuous drain current. Features low 6.5mΩ drain-source on-resistance and 6.25W maximum power dissipation. Packaged in an 8-pin SOIC surface-mount package, this component offers fast switching with turn-on delay of 11ns and fall time of 40ns. Operating temperature range is -55°C to 150°C.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power6.25W
Quick Jump:
Technical Specifications
NXP PHK28NQ03LT,518 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 23.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.45mm |
| Input Capacitance | 2.8nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.25W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 6.25W |
| Radiation Hardening | No |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | 30V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 11ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHK28NQ03LT,518 Datasheet
Download the complete datasheet for NXP PHK28NQ03LT,518 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
