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Technical Specifications
NXP PHN210,118 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
3.4A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
30V
Fall Time
15ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
250pF
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
10000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Rds On Max
100mR
RoHS Compliant
Yes
Series
TrenchMOS™
Turn-Off Delay Time
21ns
Compliance
RoHS
Compliant
Datasheet
NXP PHN210,118 Datasheet
Download the complete datasheet for NXP PHN210,118 to view detailed technical specifications.
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