
N-channel MOSFET with 60V drain-source breakdown voltage and 52A continuous drain current. Features low 22mΩ drain-source on-resistance and 120W maximum power dissipation. Operates from -55°C to 175°C, with fast switching times including 15ns turn-on delay and 40ns fall time. Packaged in TO-220AB for through-hole mounting, this RoHS compliant component is ideal for power switching applications.
NXP PHP52N06T technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 52A |
| Current Rating | 52A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 10.3mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 60V |
| Width | 4.7mm |
| RoHS | Compliant |
Download the complete datasheet for NXP PHP52N06T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.