N-channel MOSFET with 60V drain-source breakdown voltage and 52A continuous drain current. Features low 22mΩ drain-source on-resistance and 120W maximum power dissipation. Operates from -55°C to 175°C, with fast switching times including 15ns turn-on delay and 40ns fall time. Packaged in TO-220AB for through-hole mounting, this RoHS compliant component is ideal for power switching applications.
PackageTO-220AB
Current Rating52A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
NXP PHP52N06T technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
52A
Current Rating
52A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
22mR
Drain to Source Voltage (Vdss)
60V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
9.4mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Length
10.3mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
120W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
120W
RoHS Compliant
Yes
Turn-Off Delay Time
70ns
Turn-On Delay Time
15ns
DC Rated Voltage
60V
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
NXP PHP52N06T Datasheet
Download the complete datasheet for NXP PHP52N06T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.