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Technical Specifications
NXP PMBFJ620,115 technical specifications.
General
| Package/Case | TSSOP |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | -25V |
| Height | 1mm |
| Input Capacitance | 5pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 190mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 190mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMBFJ620,115 Datasheet
Download the complete datasheet for NXP PMBFJ620,115 to view detailed technical specifications.
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