The PMBT3906YS,115 is a bipolar junction transistor with a collector base voltage of 40V and a maximum collector current of 200mA. It has a maximum power dissipation of 350mW and operates over a temperature range of -55°C to 150°C. The device is packaged in a TSSOP package and is suitable for surface mount applications. It is RoHS compliant and does not have radiation hardening.
NXP PMBT3906YS,115 technical specifications.
| Package/Case | TSSOP |
| Collector Base Voltage (VCBO) | 40V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for NXP PMBT3906YS,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.