NPN bipolar junction transistor in a TO-236AB surface mount package. Features a 160V collector-emitter breakdown voltage and 180V collector-base voltage. Offers a maximum collector current of 300mA and a transition frequency of 300MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 250mW. Tin, matte contact plating and lead-free construction.
Frequency300MHz
PackageTO-236AB
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PMBT5551,215 technical specifications.
General
Package/Case
TO-236AB
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
160V
Collector-emitter Voltage-Max
200mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
6V
Height
1mm
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
160V
Max Collector Current
300mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP PMBT5551,215 Datasheet
Download the complete datasheet for NXP PMBT5551,215 to view detailed technical specifications.
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