NPN bipolar junction transistor in a TO-236AB surface mount package. Features a 160V collector-emitter breakdown voltage and 180V collector-base voltage. Offers a maximum collector current of 300mA and a transition frequency of 300MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 250mW. Tin, matte contact plating and lead-free construction.
Frequency300MHz
PackageTO-236AB
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PMBT5551,215 technical specifications.
General
| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 200mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 300mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMBT5551,215 Datasheet
Download the complete datasheet for NXP PMBT5551,215 to view detailed technical specifications.
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