The PMBT5551T3 is a NPN transistor with a collector-base voltage rating of 180V and a collector-emitter voltage rating of 160V. It has a current rating of 300mA and a maximum power dissipation of 250mW. The transistor is packaged in a SOT-23 case and is available in quantities of 10,000 per reel. It operates over a temperature range of -65°C to 150°C and is lead-free.
PackageSOT-23
Current Rating300mA
PolarityNPN
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Technical Specifications
NXP PMBT5551T3 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 180V |
| Collector-emitter Voltage-Max | 160V |
| Current Rating | 300mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Collector Current | 300mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| DC Rated Voltage | 160V |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMBT5551T3 Datasheet
Download the complete datasheet for NXP PMBT5551T3 to view detailed technical specifications.
No datasheet is available for this part.