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Technical Specifications
NXP PMDPB28UN115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 700mV |
| Input Capacitance | 265pF |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 510mW |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 37mR |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 6ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMDPB28UN115 Datasheet
Download the complete datasheet for NXP PMDPB28UN115 to view detailed technical specifications.
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