Dual general-purpose rectifier diode with a low forward voltage (V_F) and a maximum repetitive peak reverse voltage of 20V. This silicon Schottky barrier rectifier offers a maximum continuous forward current of 500 mA and a maximum power dissipation of 0.33W. Housed in a 3-terminal TO-236AB package, it operates up to a maximum temperature of 150°C.
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Technical Specifications
NXP PMEG2005CT,215 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
DUAL
JEDEC Package Code
TO-236AB
Pin Count
3
Number of Elements
2
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
20
Power Dissipation-Max
0.33
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.70
REACH
Compliant
Military Spec
False
Datasheet
NXP PMEG2005CT,215 Datasheet
Download the complete datasheet for NXP PMEG2005CT,215 to view detailed technical specifications.
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