Dual general-purpose rectifier diode with a low forward voltage (V_F) and a maximum repetitive peak reverse voltage of 20V. This silicon Schottky barrier rectifier offers a maximum continuous forward current of 500 mA and a maximum power dissipation of 0.33W. Housed in a 3-terminal TO-236AB package, it operates up to a maximum temperature of 150°C.
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Technical Specifications
NXP PMEG2005CT,215 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 20 |
| Power Dissipation-Max | 0.33 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP PMEG2005CT,215 Datasheet
Download the complete datasheet for NXP PMEG2005CT,215 to view detailed technical specifications.
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