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Technical Specifications
NXP PMF63UN115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 74mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 71ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 185pF |
| Max Dual Supply Voltage | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 275mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.785W |
| Radiation Hardening | No |
| Rds On Max | 74mR |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMF63UN115 Datasheet
Download the complete datasheet for NXP PMF63UN115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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