NXP PMG45UN115 technical specifications.
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 700mV |
| Input Capacitance | 184pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 8ns |
| RoHS | Compliant |
Download the complete datasheet for NXP PMG45UN115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.