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Technical Specifications
NXP PMGD175XN115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 1V |
| Input Capacitance | 75pF |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 390mW |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 225mR |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 6.5ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMGD175XN115 Datasheet
Download the complete datasheet for NXP PMGD175XN115 to view detailed technical specifications.
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