N-channel MOSFET transistor featuring 30V drain-source breakdown voltage and 740mA continuous drain current. This dual N-channel MOSFET offers a maximum drain-source on-resistance of 440mΩ at a 10V gate-source voltage. Operating across a wide temperature range from -55°C to 150°C, it has a maximum power dissipation of 410mW and is supplied in a 6-pin TSSOP package on tape and reel. Key switching characteristics include a 6.5ns turn-on delay and a 9.5ns fall time.
PackageSOT
PolarityN-CHANNEL
Power410mW
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Technical Specifications
NXP PMGD370XN,115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 740mA |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 440mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 440MR |
| Fall Time | 9.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 37pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 410mW |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 410mW |
| Radiation Hardening | No |
| Rds On Max | 440mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 6.5ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMGD370XN,115 Datasheet
Download the complete datasheet for NXP PMGD370XN,115 to view detailed technical specifications.
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