N-channel MOSFET with 30V drain-source breakdown voltage and 6.7A continuous drain current. Features low 16mΩ drain-source resistance at Vgs=10V, 1.5V threshold voltage, and 630pF input capacitance. Operates from -55°C to 150°C with 545mW power dissipation. Packaged in SOT for tape and reel distribution.
PackageSOT
PolarityN-CHANNEL
Power545mW
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Technical Specifications
NXP PMN20EN,115 technical specifications.
General
Package/Case
SOT
Continuous Drain Current (ID)
6.7A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
16mR
Drain to Source Voltage (Vdss)
30V
Fall Time
85ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
630pF
Lead Free
Lead Free
Max Dual Supply Voltage
30V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
545mW
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
545mW
Radiation Hardening
No
Rds On Max
20mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.5V
Turn-Off Delay Time
200ns
Turn-On Delay Time
4ns
Compliance
RoHS
Compliant
Datasheet
NXP PMN20EN,115 Datasheet
Download the complete datasheet for NXP PMN20EN,115 to view detailed technical specifications.
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