N-channel Trench MOSFET featuring 30V drain-source breakdown voltage and 6.2A continuous drain current. Offers a low drain-source on-resistance of 20mR (typical) and 23mR (maximum). Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 540mW. Packaged in SOT for tape and reel distribution, this lead-free and RoHS compliant component boasts fast switching times with a 5ns turn-on delay and 40ns fall time.
PackageSOT
PolarityN-CHANNEL
Power540mW
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Technical Specifications
NXP PMN25EN,115 technical specifications.
General
Package/Case
SOT
Continuous Drain Current (ID)
6.2A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
23MR
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
492pF
Lead Free
Lead Free
Max Dual Supply Voltage
30V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
540mW
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
540mW
Radiation Hardening
No
Rds On Max
23mR
RoHS Compliant
Yes
Turn-Off Delay Time
94ns
Turn-On Delay Time
5ns
Compliance
RoHS
Compliant
Datasheet
NXP PMN25EN,115 Datasheet
Download the complete datasheet for NXP PMN25EN,115 to view detailed technical specifications.
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