N-channel Trench MOSFET featuring 30V drain-source breakdown voltage and 6.2A continuous drain current. Offers a low drain-source on-resistance of 20mR (typical) and 23mR (maximum). Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 540mW. Packaged in SOT for tape and reel distribution, this lead-free and RoHS compliant component boasts fast switching times with a 5ns turn-on delay and 40ns fall time.
PackageSOT
PolarityN-CHANNEL
Power540mW
Quick Jump:
Technical Specifications
NXP PMN25EN,115 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 23MR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 492pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 540mW |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 94ns |
| Turn-On Delay Time | 5ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMN25EN,115 Datasheet
Download the complete datasheet for NXP PMN25EN,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.