
N-channel MOSFET, 30V Vdss, 5.4A continuous drain current, and 38mR Rds On Max. Features a 6TSOP surface mount package with dimensions of 3.1mm length, 1.7mm width, and 1mm height. Operates from -55°C to 150°C with a maximum power dissipation of 1.75W. Includes 14ns turn-on delay, 19ns fall time, and 28ns turn-off delay.
NXP PMN38EN135 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Breakdown Voltage | 27V |
| Drain to Source Resistance | 38mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 46MR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 495pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.75W |
| Rds On Max | 38mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 14ns |
| Width | 1.7mm |
| RoHS | Compliant |
Download the complete datasheet for NXP PMN38EN135 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.