The PMST5550,135 is a surface mount NPN bipolar junction transistor with a maximum collector current of 300mA and a maximum power dissipation of 200mW. It has a gain bandwidth product of 300MHz and a maximum operating temperature of 150°C. The transistor is packaged in a small outline SC package and is RoHS compliant. It has a minimum operating temperature of -65°C and is suitable for high-frequency applications.
Frequency300MHz
PackageSC
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PMST5550,135 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| Max Collector Current | 300mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMST5550,135 Datasheet
Download the complete datasheet for NXP PMST5550,135 to view detailed technical specifications.
No datasheet is available for this part.