The PMT760EN115 is a surface mount MOSFET from NXP with a maximum drain to source voltage of 20V and continuous drain current of 900mA. It features a maximum power dissipation of 800mW and an on-resistance of 950mR. The device is packaged in a TO-261-4 package and is available in quantities of 1000 on tape and reel.
PackageTO-261-4
MountingSurface Mount
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Technical Specifications
NXP PMT760EN115 technical specifications.
General
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 900mA |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 160pF |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Rds On Max | 950mR |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMT760EN115 Datasheet
Download the complete datasheet for NXP PMT760EN115 to view detailed technical specifications.
No datasheet is available for this part.