N-channel MOSFET with 30V drain-source breakdown voltage and 4.8A continuous drain current. Features low 19mΩ drain-source on-resistance at Vgs=10V, 585pF input capacitance, and 12V gate-source voltage rating. Packaged in a 3-pin TO-236AB (SOT) surface-mount package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 510mW. Turn-on delay is 12ns, and turn-off delay is 128ns.
PackageSOT
PolarityN-CHANNEL
Power510mW
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Technical Specifications
NXP PMV20XN,215 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 25MR |
| Fall Time | 68ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 585pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 510mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 510mW |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 128ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PMV20XN,215 Datasheet
Download the complete datasheet for NXP PMV20XN,215 to view detailed technical specifications.
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