NPN Bipolar Junction Transistor (BJT) for high-frequency applications. Features a 9 GHz transition frequency and 10V collector-emitter breakdown voltage. Maximum continuous collector current is 50mA, with a maximum power dissipation of 150mW. This surface-mount device is housed in an SC package, offering a wide operating temperature range from -65°C to 150°C.
Frequency9GHz
PackageSC
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PRF949,115 technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
10V
Collector Emitter Voltage (VCEO)
10V
Collector-emitter Voltage-Max
10V
Continuous Collector Current
50mA
Emitter Base Voltage (VEBO)
1.5V
Frequency
9GHz
Gain
16dB
Height
0.85mm
hFE Min
100
Lead Free
Lead Free
Length
1.8mm
Max Breakdown Voltage
10V
Max Collector Current
50mA
Max Frequency
9GHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Elements
1
Operating Frequency
9 GHz
Output Power
150mW
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Transition Frequency
9GHz
Width
0.9mm
Compliance
RoHS
Compliant
Datasheet
NXP PRF949,115 Datasheet
Download the complete datasheet for NXP PRF949,115 to view detailed technical specifications.
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