NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a maximum transition frequency of 8.5GHz and a maximum collector current of 100mA. This surface mount device offers a collector-emitter breakdown voltage of 10V and a maximum power dissipation of 270mW. Operating across a temperature range of -65°C to 175°C, it is packaged in a 3SOT323 (SC) case and is RoHS compliant.
Frequency8.5GHz
PackageSC
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PRF957,115 technical specifications.
General
Package/Case
SC
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
10V
Collector Emitter Voltage (VCEO)
10V
Emitter Base Voltage (VEBO)
1.5V
Frequency
8.5GHz
Gain
14dB
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
10V
Max Collector Current
100mA
Max Frequency
8.5GHz
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
270mW
Mount
Surface Mount
Number of Elements
1
Output Power
270mW
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
270mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
8.5GHz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
NXP PRF957,115 Datasheet
Download the complete datasheet for NXP PRF957,115 to view detailed technical specifications.
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