NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a maximum transition frequency of 8.5GHz and a maximum collector current of 100mA. This surface mount device offers a collector-emitter breakdown voltage of 10V and a maximum power dissipation of 270mW. Operating across a temperature range of -65°C to 175°C, it is packaged in a 3SOT323 (SC) case and is RoHS compliant.
Frequency8.5GHz
PackageSC
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PRF957,115 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector Emitter Voltage (VCEO) | 10V |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 8.5GHz |
| Gain | 14dB |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 100mA |
| Max Frequency | 8.5GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 270mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 270mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 270mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 8.5GHz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PRF957,115 Datasheet
Download the complete datasheet for NXP PRF957,115 to view detailed technical specifications.
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