The PSMN010-55D,118 is a surface mount N-CHANNEL TrenchMOS MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 75A and a maximum power dissipation of 125W. The device features a drain to source breakdown voltage of 55V and a drain to source resistance of 10.5mR. It is lead free and RoHS compliant, packaged in a TO-252-3 case and available in quantities of 2500.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
NXP PSMN010-55D,118 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 216ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 3.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 10.5mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 250ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PSMN010-55D,118 Datasheet
Download the complete datasheet for NXP PSMN010-55D,118 to view detailed technical specifications.
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