N-channel SiliconMAX standard level MOSFET in a TO-220 3-Pin package. Features 100V drain-to-source breakdown voltage and 15mΩ drain-to-source resistance. Offers a continuous drain current of 75A and a maximum power dissipation of 300W. Operates across a wide temperature range from -55°C to 175°C. Includes a 4.9nF input capacitance and fall time of 50ns. Lead-free and RoHS compliant.
PackageSOT
Voltage100V
Current75A
PolarityN-CHANNEL
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Technical Specifications
NXP PSMN015-100P,127 technical specifications.
General
Package/Case
SOT
Continuous Drain Current (ID)
75A
Current
75A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
15mR
Drain to Source Voltage (Vdss)
100V
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.9nF
Lead Free
Lead Free
Max Dual Supply Voltage
100V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
15mR
RoHS Compliant
Yes
Series
TrenchMOS™
Turn-Off Delay Time
95ns
Voltage
100V
Compliance
RoHS
Compliant
Datasheet
NXP PSMN015-100P,127 Datasheet
Download the complete datasheet for NXP PSMN015-100P,127 to view detailed technical specifications.
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