N-channel SiliconMAX standard level MOSFET in a TO-220 3-Pin package. Features 100V drain-to-source breakdown voltage and 15mΩ drain-to-source resistance. Offers a continuous drain current of 75A and a maximum power dissipation of 300W. Operates across a wide temperature range from -55°C to 175°C. Includes a 4.9nF input capacitance and fall time of 50ns. Lead-free and RoHS compliant.
PackageSOT
Voltage100V
Current75A
PolarityN-CHANNEL
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Technical Specifications
NXP PSMN015-100P,127 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 75A |
| Current | 75A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.9nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 95ns |
| Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
NXP PSMN015-100P,127 Datasheet
Download the complete datasheet for NXP PSMN015-100P,127 to view detailed technical specifications.
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