The PSMN016-100XS,127 is an N-CHANNEL MOSFET with a maximum continuous drain current of 32.1A and a drain to source breakdown voltage of 100V. It features a drain to source resistance of 13mR and a maximum power dissipation of 46.1W. The device is packaged in a TO-220-3 package and is lead free. It operates over a temperature range of -55°C to 175°C and is RoHS compliant.
PackageTO-220-3
PolarityN-CHANNEL
Power46.1W
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Technical Specifications
NXP PSMN016-100XS,127 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 32.1A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.404nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 46.1W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 46.1W |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 16ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PSMN016-100XS,127 Datasheet
Download the complete datasheet for NXP PSMN016-100XS,127 to view detailed technical specifications.
No datasheet is available for this part.